aug.1998 l i tqrm repetitive controllable on-state current ........... 6000a l i t(a v) a verage on-state current ..................... 1500a l q rr repetitive peak of f state voltage ......... 6000v l anode short type 300 8 0.4 min 0.4 min f 130 0.2 f 130 0.2 f 190 max f 190 max 35 0.5 cathode type name anode gate (white) auxiliary cathode connector (red) f 3.6 0.2 depth 2.2 0.2 f 3.6 0.2 depth 2.2 0.2 v v v v v v 120d 22 22 22 6000 6000 4800 a a a ka a 2 s a/ m s v v a a w kw w w c c kn g i tqrm i t(rms) i t(a v) i tsm i 2 t d it /d t v fgm v rgm i fgm i rgm p fgm p rgm p fg(a v) p rg(a v) t j t stg + : v gk = C2v FG6000AU-120D v rrm v rsm v r(dc) v drm v dsm v d(dc) 6000 3100 2000 40 6.7 10 6 500 10 22 200 2400 2000 50 140 630 C40 ~ +125 C40 ~ +150 98 ~ 1 18 4600 applica tion inverters, converters, dc choppers, induction heating, dc to dc converters. outline drawing dimension in mm mitsubishi ga te turn-off thyrist ors FG6000AU-120D high power inverter use press p ack type unit ratings maximum ra tings v oltage class symbol repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage repetitive peak of f-state voltage + non-repetitive peak of f-state voltage + dc of f-state voltage + parameter unit symbol parameter conditions repetitive controllable on-state current rms on-state current a verage on-state current surge (non-repetitive) on-state current current-squared, time integration critical rate of rise of on-state current peak forward gate voltage peak reverse gate voltage peak forward gate current peak gate reverse current peak forward gate power dissipation peak reverse gate power dissipation a verage forward gate power dissipation a verage reverse gate power dissipation junction temperature storage temperature mounting force required w eight v d = 3000v , v dm = 5500v , t j = 125 c, c s = 6.0 m f, l s = 0.2 m h f = 60hz, sine wave q = 180 , t f = 72 c one half cycle at 60hz one cycle at 60hz v d = 3000v , i gm = 90a, t j = 125 c recommended value 108 standard value
aug.1998 0 10 20 30 40 50 10 0 10 1 23 5 7 1 0 2 23 5 7 0 0.001 0.002 0.003 0.008 0.005 0.006 0.007 10 C3 21 0 C2 35 7 2 1 0 C1 35 7 2 1 0 0 35 7 10 0 21 0 1 35 7 0.004 10 C1 7 5 3 2 10 0 7 5 3 2 10 1 7 5 3 2 10 2 7 5 3 2 10 3 23 5 7 23 5 7 10 1 23 5 7 10 0 10 C1 10 2 23 5 7 10 3 v fgm = 10v v gt = 1.5v i fgm = 200a t j = 25c p fgm = 2000w p fg(av) = 140w i gt = 8.4a 10 2 10 3 2 3 5 7 10 4 2 3 5 7 02468 1 0 t j = 125c on-state current (a) on-state voltage (v) maximum on-state characteristic surge on-state current (ka) conduction time (cycles at 60hz) rated surge on-state current thermal impedance (c/ w) time (s) maximum thermal impedance characteristic (junction to fin) gate voltage (v) gate current (ma) gate characteristics mitsubishi ga te turn-off thyrist ors FG6000AU-120D high power inverter use press p ack type 6.0 100 320 100 10 1.5 8.4 0.0044 v ma ma ma v/ m s m s a v a c/w t j = 125 c, i tm = 6000a, instantaneous measurment t j = 125 c, v rrm applied t j = 125 c, v drm applied, v gk = C2v t j = 125 c, v rg = 22v t j = 125 c, v d = 3000v , v dm = 5500v , v gk = C2v t j = 125 c, i tm = 6000a, i gm = 90a, v d = 3000v junction to fin v tm i rrm i drm i rg d v /d t t gt i gqm v gt i gt r th(j-f) t gq t j = 125 c, i tm = 6000a, v dm = 5500v , d igq /d t = C80a/ m s v rg = 20v , c s = 6.0 m f, l s = 0.2 m h 3 0 m s 1800 1000 dc method : v d = 24v , r l = 0.1 w , t j = 25 c performance cur ves on-state voltage repetitive peak reverse current repetitive peak of f-state current reverse gate current critical rate of rise of of f-state voltage t urn-on time peak gate turn-of f current gate trigger voltage gate trigger current thermal resistance electrical characteristics symbol parameter t est conditions limits min t y p unit max t urn-of f time
aug.1998 0 5 10 15 20 25 ?0 0 40 80 120 160 v d = 24v r l = 0.1 w igt vgt 0 4 6 2 8 0 40 80 120 160 200 t gt t d i t = 6000a v d = 3000v d it /d t = 500a/ m s d ig /d t = 30a/ m s c s = 6.0 m f r s = 5.0 w t j = 125? 0 2000 4000 6000 8000 10000 12000 14000 16000 0 400 800 1200 1600 2000 0 400 800 1200 1600 2000 90 120 180 q = 30 60 q 360 0 20 40 60 80 100 120 140 160 q 360 0 2000 4000 6000 8000 10000 12000 14000 16000 0 4000 500 1000 1500 2000 2500 3000 3500 dc 270 q = 30 120 180 60 90 360 q 0 20 40 60 80 100 120 140 160 0 4000 500 1000 1500 2000 2500 3000 3500 q = 30 90 60 120 180 270 dc 360 q q = 30 60 90 120 180 on-state power dissipation (w) average on-state current (a) maximum on-state power dissipation characteristics (single-phase half wave) fin temperature (?) average on-state current (a) allowable fin temperature vs. average on-state current (single-phase half wave) fin temperature (?) average on-state current (a) allowable fin temperature vs. average on-state current (rectangular wave) gate trigger current (a), gate trigger voltage (v) junction temperature (?) gate trigger current, gate trigger voltage vs. junction temperature (typical) turn on time t gt , turn on delay time t d ( m s) turn on gate current (a) turn on time, turn on delay time vs. turn on gate current (typical) on-state power dissipation (w) average on-state current (a) maximum on-state power dissipation characteristics (rectangular wave) resistive, inductive load resistive, inductive load resistive, inductive load resistive, inductive load dc method mitsubishi gate turn-off thyristors FG6000AU-120D high power inverter use press pack type
aug.1998 mitsubishi gate turn-off thyristors FG6000AU-120D high power inverter use press pack type 10 20 30 40 50 0 2000 4000 6000 8000 t s t gq v d = 3000v v dm = 5500v d igq /d t = ?0a/ m s v gr = 17v c s = 6.0 m f l s = 0.2 m h t j = 125? 10 20 30 40 50 0 20 40 60 80 100 120 140 160 t gq t s v d = 3000v v dm = 5500v i t = 6000a v rg = 17v c s = 6.0 m f l s = 0.2 m h t j = 125? 500 1000 1500 2000 2500 0 2000 4000 6000 8000 v d = 3000v v dm = 5500v d igq /d t = ?0a/ m s v rg = 17v c s = 6.0 m f l s = 0.2 m h t j = 125? 500 1000 1500 2000 2500 0 20 40 60 80 100 120 140 160 v d = 3000v v dm = 5500v i t = 6000a v rg = 17v c s = 6.0 m f l s = 0.2 m h t j = 125? 0.5 1.0 1.5 2.0 2.5 0 2000 4000 6000 8000 v d = 3000v i gm = 90a d it /d t = 300a / m s d ig /d t = 30a/ m s c s = 6.0 m f r s = 5.0 w t j = 125? 0 5 10 15 20 0 2000 4000 6000 8000 v d = 3000v v dm = 5500v d igq /d f = ?0a/ m s v rg = 17v c s = 6.0 m f l s = 0.2 m h t j = 125? rate of rise of turn off gate current (a / m s) turn off gate current (a) rate of rise of turn off gate current (a / m s) turn off gate current vs. rate of rise of gate current (typical) switching energy eon (j/p) turn on current (a) turn on switching energy (typical) turn off gate current (a) turn off current (a) turn off gate current vs. turn off current (typical) switching energy eoff (j/p) turn off current (a) turn off switching energy (typical) turn off time t gq c turn off storage time t s ( m s) turn off current (a) turn off time, turn off storage time vs. turn off current (typical) turn off time t gq , turn off storage time t s ( m s) turn off time, turn off storage time vs. rate of rise of turn off gate current (typical)
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